Mobile Semiconductor’s silicon-proven embedded SRAM technology offers optimized memory solutions for both TSMC and GLOBALFOUNDRIES 28nm low-power processes. These single-port SRAM and ROM solutions are available in a range of architectures:
- Low Voltage, Low Leakage, Low Power SRAM (LV)
- Ultra High Speed SRAM (UHS)
- High Density SRAM (HD)
- Multi-Megabit SRAM (MM)
Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while keeping die size small.
- Low voltage (LV) SRAM and ROM use high VT devices to minimize leakage currents with limited standard VT devices used when required and a dedicated retention mode providing industry leading low standby currents. The low standby current of Mobile Semiconductor’s LV memories are ideal for the IoT market.
- Single-port ultra-high speed (UHS) memories use low VT and standard VT devices to optimize the critical path and enhance performance while limiting static current.
- Single-port high density (HD) memories use standard VT and high VT devices to optimize the critical path and enhance performance while limiting static current.
- Single-port multi-megabit (MM) memories achieve the highest SRAM block densities with rectangular or L-shaped footprints for flexible SOC floorplanning.
TSMC 28nm HPC+
Mobile Semiconductor’s optimized TSMC 28nm HPC+ process embedded single-port SRAM and ROM solutions are available in the low voltage (LV) architectures.
To ensure high manufacturing yield, the Trailblaze™ software software utilizes TSMC’s standard high density 6T bit cells and is consistent with TSMC’s Design for Manufacturing (DFM) guidelines for the 28nm HPC+ process.
|Mobile Semiconductor Optimized TSMC 28nm HPC+Architecture||Trailblaze™ Compiler Name|
|Single-Port SRAM, Low Voltage||SP-LV-TS28HPCP|
|Single-Port SRAM, Low Voltage, Column Redundancy||SP-LVR-TS28HPCP|
|Contact Programmable ROM, Low Voltage||ROM-ULV-TS28HPCP|
GLOBALFOUNDRIES 28nm SLP
Mobile Semiconductor offers an optimized GLOBALFOUNDRIE’s 28nm SLP-process embedded single-port SRAM and ROM solutions in both Low Voltage (LV) and High Speed (HS) architectures.
In order to ensure high manufacturing yield, the Trailblaze™ software utilizes GLOBALFOUNDRIES’s standard high density 6T bit cells and is consistent with GLOBALFOUNDRIES’s Design for Manufacturing (DFM) guidelines for the 28nm SLP process.
|Mobile Semiconductor Optimized GLOBALFOUNDRIES 28nm SLP Architecture||Trailblaze™ Compiler Name|
|Single-Port SRAM, Low Voltage||SP-LV-GF28SLP|
|Contact Programmable ROM, Low Voltage||ROM-LV-GF28SLP|
|Single-Port Register File, Low Voltage||RF1P-LV-GF28SLP|
|Two-Port Register File, Low Voltage||RF2P-LV-GF28SLP|
|Dual Port SRAM, Low Voltage||DP-LV-GF28SLP|
|Single-Port SRAM, Low Voltage||SP-LV-GF28SLP-ULL|
|Single-Port Register File, High Speed||RF1P-HS-GF28SLP|
|Two-Port Register File, High Speed||RF2P-HS-GF28SLP|
|Single-Port SRAM, High Speed||SP-UHS-GF28SLP|
|Via Programmable ROM, Low Voltage||ROM-ULV-GF28SLP|
|Single-Port Register File, Low Voltage||RF1P-LV-GF28SLP-ULL|
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