Rad Hard Products
Mobile Semiconductor is the only independent memory compiler company specializing in radiation hardened embedded SRAM technology. Mobile Semiconductor’s radiation tested solutions are developed with the industry’s leading experience in designing to radiation hardening targets: Total Ionizing Dose (TID), Multi-Bit Upset (MBU), minimum critical charge (Qcrit) and Single Event Effects (SEE) including Single Event Latchup (SEL), Single Event Upset (SEU) and Single Event Transients (SET).
The Trailblaze™ software generates complete memory instances that meet leading aerospace and defense corporations’ stringent radiation hardening criteria. Optimized, embedded SRAMs by Mobile Semiconductor also have the option to include the Trailblaze™ Built-in Self Test (BIST) Compiler for seamless integration of verification.
As a privately-held U.S. company, Mobile Semiconductor is registered for ITAR (International Traffic in Arms Regulations) as an SRAM and design service provider. Mobile Semiconductor’s rad hard solutions come with broad and flexible IP rights and the full design databases for all instances. All rad hard development data is maintained in a separate secure network and location for which access is restricted to the specific project development team members only
Radiation hardened by design (RHBD), Mobile Semiconductor’s innovative design approach incorporates Triple Mode Redundancy (TMR), DICE latches and Qcrit optimization to reduce SET and SEU, as well as bit separation to reduce MBU. Mobile Semiconductor’s RHBD techniques may be applied to both standard and radiation hardened CMOS processes, which includes enhancing designs using radiation hardening by process (RHBP).
Robust DICE latches and Triple Mode Redundancy (TMR) are used throughout Mobile Semiconductor’s rad hard designs to ensure soft error immunity. To further enhance yield, the Trailblaze™ software can instantiate optional redundancy columns in each memory sub-array of the single-port architectures.
Mobile Semiconductor offers single-port and dual-port radiation hardened 90nm SRAM solutions.
In order to ensure high manufacturing yield, the Trailblaze™ software utilizes proprietary optimized 6T (single-port) and 8T (dual-port) bit cells. Mobile Semiconductor’s IBM 90nm designs are consistent with IBM’s Design for Manufacturing (DFM) guidelines. To further enhance yield, the compiler can instantiate optional redundancy columns in each memory sub-array of the single-port architecture. The IBM 90nm process is part of the National Security Agency’s (NSA) Trusted Foundry program.
|Mobile Semiconductor Optimized IBM 90nm Architecture||Trailblaze™ Compiler Name|
|Single-Port, Rad Hard||SPSRAM90|
|Dual-Port, Rad Hard||DPSRAM90|
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